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t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 1 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com ac - qfn 4 x 4 mm 14 l p ad configuration p ad no. symbol 1 , 3, 8, 10 gnd 2 rf in 4, 14 vg1 5, 7, 11, 13 n/c 6, 12 vg2 9 rf out / vd applications ? commercial and military ra dar ? communication s ? electronic warfare general description qorvo s tga297 6 - sm is a wide b and cascode a mplifier fabricated on qorvo s production 0.25um gan on sic process . the casco de configuration offers exceptional wideband performance as well as support ing 4 0 v operation . the tga297 6 - sm operates from 0. 1 - 3. 0 ghz and provides greater than 1 0 w of saturated output power with greater than 1 3 db of large signal gain and greater than 38 % power - added efficiency. t he tga297 6 - sm is available in a low - cost, surface mount 14 lead 4 x 4 air cavity laminate package . it is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. the tg a297 6 - sm is fully matched to 50? at both rf ports allowing for simple system integration. dc blocks are required on both rf ports and the drain voltage must be injected through an off chip bias - tee on the rf output po rt . lead - free and rohs compliant. evaluation boards are available upon request. ordering information part eccn description tga2 97 6 - sm ear99 0.1 C 3. 0 ghz 1 0 w gan power amplifier product features ? frequency range: 0.1 C 3. 0 ghz ? p sat : > 4 0 dbm at p in = 27 dbm ? pae : 48 % @ midband ? large signal gain: >13 db ? small signal gain: >20 db ? bias : v d = 40 v , i dq = 360 ma , v g 1 = - 2. 4 v typical, v g 2 = +17 .7 v typical ? wideband flat gain and power ? package dimensions: 4 .0 x 4 .0 x 1. 64 mm functional block diagram 10 11 12 13 14 1 2 3 4 5 6 7 8 9 rf in rf out
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 2 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 80 v gate voltage range (v g 1 ) - 8 to 0 v gate voltage range (v g 2 ) 0 to 40 v drain current (i d ) 760 ma gate current (i g 1 ) see plot on pg. 3 gate current (i g 2 ) see plot on pg. 3 power dissipation (p diss ) , 85c 28 w input power (p in ) , cw, 50 , 85c, 33 dbm input power (p in ) , cw, vswr 3 :1, v d = 4 0 v, 85c 33 dbm channel t emperature (t ch ) 275c mounting temperature (30 seconds) 260 c storage temperature - 55 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) 40 v drain current (i d q ) 360 m a gate voltage (v g 1 ) - 2.4 v (typ.) gate voltage (v g 2 ) +17 .7 v (typ.) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25 0 c, v d = 40 v, i d q = 360 m a, v g 1 = - 2.4 v typical , v g 2 = +17 .7 v typical parameter min typical max units operational frequency range 0. 1 3. 0 ghz small signal gain > 20 db input return loss > 5 db output return loss > 9 db output power (pin = 27 dbm) > 40 db m power added efficiency (pin = 27 dbm) 48 (mid band) % im3 @ 120ma , p out /t one = 28 dbm - 30 dbc im5 @ 120ma , p out /tone = 28 dbm - 3 8 dbc small signal gain temperature coefficient - 0.0 3 db/ c output power temperature coefficient - 0.00 9 dbm/ c recommended operating voltage: 40 50 v
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 3 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85 c , v d (2) = 40 v (cw) i d q = 360 ma, i d _drive = 655 ma p in = 27 dbm, p out = 40 dbm, p diss = 17.4 w 5.26 oc/w channel temperature (t ch ) (under rf drive) 17 7 c median lifetime (t m ) 1.07 x 10^ 8 hrs thermal resistance ( jc ) (1) t base = 85 c , v d (2) = 50 v (cw) i d q = 360 ma, i d _drive = 665 ma p in = 27 dbm, p out = 40 dbm, p diss = 23.6 w 5.72 oc/w channel temperature (t ch ) (under rf drive) 220 c median lifetime (t m ) 2.34 x 10^ 6 hrs notes: 1. thermal resistance measured to back of package. 2. the drain voltage for cascode amplifier transistor is ? of the v d . test conditions: v d = 40 v; failure criteria = 10% reduction in i d_max 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 1e+16 1e+17 1e+18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 p diss (w) frequency (ghz) p diss vs. frequency 50v 40v temp. = + 85 c i dq = 360 ma p in = 27 dbm 4.0 4.5 5.0 5.5 6.0 6.5 7.0 14 15 16 17 18 19 20 21 22 23 24 r jc (c/w) p diss (w) thermal resistance vs. p diss t base = + 85 c cw 0 5 10 15 20 25 30 35 40 45 50 120 130 140 150 160 170 180 190 200 210 220 230 gate current maximum (ma) channel temperature ( c) tga2976 - sm ig_max vs. t ch vs. stage i g1_max & i g2_max total ig_max
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 4 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 2 ) typical performance : small signal 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s 21 (db) frequency (ghz) gain vs. frequency vs. temperature -40c +25c +85c v d = 40 v, i dq = 360 ma 9 12 15 18 21 24 27 0 0.5 1 1.5 2 2.5 3 3.5 4 s 21 (db) frequency (ghz) gain vs. frequency vs. i d 120 ma 240 ma 360 ma temp. = + 25 c v d = 40 v -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s 11 (db) frequency (ghz) input return loss vs. freq. vs. temp. -40c +25c +85c v d = 40 v, i dq = 360 ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s 11 (db) frequency (ghz) input return loss vs. freq. vs. i d 120 ma 240 ma 360 ma v d = 40 v temp. = + 25 c -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s 22 (db) frequency (ghz) output return loss vs. freq. vs. temp. -40c +25c +85c v d = 40 v, i dq = 360 ma -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 s 22 (db) frequency (ghz) output return loss vs. freq. vs. i d 120 ma 240 ma 360 ma v d = 40 v temp. = + 25 c
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 5 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 2 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. i dq 120 ma 360 ma p in = 27dbm temp. = +25 c v d = 40 v 20 25 30 35 40 45 50 55 60 65 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. i dq 120 ma 360 ma p in = 27dbm temp. = +25 c v d = 40 v 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. i dq 120 ma 360 ma p in = 27dbm temp. = +25 c v d = 40 v -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1 1.5 2 2.5 3 3.5 4 gate1 current (ma) frequency (ghz) gate1 current vs. frequency vs. i dq 360 ma 120 ma p in = 27dbm temp. = +25 c v d = 40 v -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1 1.5 2 2.5 3 3.5 4 gate2 current (ma) frequency (ghz) gate2 current vs. frequency vs. i dq 120 ma 360 ma p in = 27dbm temp. = +25 c v d = 40 v
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 6 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance: large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 2 ) 35 36 37 38 39 40 41 42 43 44 45 0 0.5 1 1.5 2 2.5 3 p out (dbm) frequency (ghz) output power vs. frequency vs. v d 40v360ma 50v360ma p in = 27dbm temp. = +25 c 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 pae (%) frequency (ghz) pae vs. frequency vs. v d 40v360ma 50v360ma p in = 27dbm temp. = +25 c 300 400 500 600 700 800 900 0 0.5 1 1.5 2 2.5 3 drain current (ma) frequency (ghz) drain current vs. frequency vs. v d 40v 50v p in = 27dbm temp. = +25 c i dq = 360 ma -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1 1.5 2 2.5 3 gate1 current (ma) frequency (ghz) gate1 current vs. frequency vs. v d 40v 50 v p in = 27dbm temp. = +25 c i dq = 360ma -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1 1.5 2 2.5 3 gate2 current (ma) frequency (ghz) gate2 current vs. frequency vs. v d 40v 50v p in = 27dbm temp. = +25 c i dq = 360ma
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 7 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 2 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40 v, i dq = 360 ma 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. temperature -40c +25c +85c p in = 27dbm v d = 40 v, i dq = 360 ma 200 300 400 500 600 700 800 0 0.5 1 1.5 2 2.5 3 3.5 4 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40 v, i dq = 360 ma -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 0 0.5 1 1.5 2 2.5 3 3.5 4 gate1 current (ma) frequency (ghz) gate1 current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40 v, i dq = 360 ma -0.5 0.5 1.5 2.5 3.5 4.5 5.5 6.5 0 0.5 1 1.5 2 2.5 3 3.5 4 gate2 current (ma) frequency (ghz) gate2 current vs. frequency vs. temp. -40c +25c +85c p in = 27dbm v d = 40 v, i dq = 360 ma
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 8 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance : large signal (cw) the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 2 ) 0 10 20 30 40 50 60 70 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power 27dbm 26dbm 24dbm 22dbm temp. = +25 c v d = 40 v, i dq = 360 ma 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq. vs. input power 22dbm 24dbm 26dbm 27dbm temp. = +25 c v d = 40 v, i dq = 360 ma 10 13 16 19 22 25 28 31 34 37 40 43 -10 -5 0 5 10 15 20 25 30 p out (dbm) input power (dbm) output power vs. input power vs. freq. 0.25 ghz 1.0 ghz 2.0 ghz 3.0 ghz temp. = +25 c v d = 40 v, i dq = 360 ma 0 10 20 30 40 50 60 70 -10 -5 0 5 10 15 20 25 30 pae (%) input power (dbm) pae vs. input power vs. freq. 0.25 ghz 1.0 ghz 2.0 ghz 3.0 ghz temp. = +25 c v d = 40 v, i dq = 360 ma 100 200 300 400 500 600 700 800 -10 -5 0 5 10 15 20 25 30 drain current (ma) input power (dbm) drain current vs. input power vs. freq. 0.25 ghz 1.0 ghz 2.0 ghz 3.0 ghz temp. = +25 c v d = 40 v, i dq = 360 ma
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 9 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance : linearity the plots reflect performance measured with an external coaxial bias tee and dc blocks (s ee application circuit on page 1 2 ) -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. i dq v d = 40 v, 2.0 ghz, 10mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -120 -105 -90 -75 -60 -45 -30 -15 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. i dq v d = 40 v, 2.0 ghz, 10 mhz tone spacing temp. = +25 c i dq = 120 ma i dq = 240 ma i dq = 360 ma -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temperature v d = 40 v, i dq = 360 ma, 2.0 ghz, 10 mhz tone spacing - 40 c +25 c +85 c -120 -105 -90 -75 -60 -45 -30 -15 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temperature v d = 40 v, i dq = 360 ma, 2.0 ghz, 10 mhz tone spacing - 40 c +25 c +85 c -80 -70 -60 -50 -40 -30 -20 -10 0 5 10 15 20 25 30 35 40 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 40 v, i dq = 360 ma, 10 mhz tone spacing temp. = +25 c 2.0 ghz 3.0 ghz -120 -105 -90 -75 -60 -45 -30 -15 0 5 10 15 20 25 30 35 40 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 40 v, i dq = 360 ma, 10 mhz tone spacing temp. = +25 c 3.0 ghz 2.0 ghz
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 10 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance : linearity the plots reflect performance measured with an external coaxial bias tee and dc blocks (see application circuit on page 1 2 ) -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. freq. v d = 40 v, i dq = 360 ma temp. = +25 c 2.0 ghz 1.0 ghz -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. freq. v d = 40 v, i dq = 360 ma temp. = +25 c 2.0 ghz 1.0 ghz -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. freq. v d = 40 v, i dq = 360 ma freq. = 1.0 ghz +85 c +25 c - 40 c -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. freq. v d = 40 v, i dq = 360 ma freq. = 1.0 ghz +85 c +25 c - 40 c -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 2f 0 output power (dbc) output power per tone (dbm) 2 nd harmonic vs. output power vs. i d . freq. = 1.0 ghz temp. = +25 c 360 ma 120 ma v d = 40 v -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 20 25 30 35 40 45 3f 0 output power (dbc) output power per tone (dbm) 3 rd harmonic vs. output power vs. i d . freq. = 1.0 ghz temp. = +25 c 360 ma 120 ma v d = 40 v
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 11 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com typical performance : large signal (cw) , on - board vs. external coaxial bias - t the plots below reflect performance measured between external bias tee and on - board bias tee ( see application circuit on pages 1 2 and 1 4 ) 35 36 37 38 39 40 41 42 43 0 0.5 1 1.5 2 2.5 3 3.5 4 p out (dbm) frequency (ghz) output power vs. freq vs. input power external bias-t on-board bias-t temp. = +25 c v d = 40 v, i dq = 360 ma p in = 27dbm 20 25 30 35 40 45 50 55 60 65 0 0.5 1 1.5 2 2.5 3 3.5 4 pae (%) frequency (ghz) pae vs. frequency vs. input power external bias-t on-board bias-t temp. = +25 c v d = 40 v, i dq = 360 ma p in = 27dbm
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 12 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com note s : 1. v g1 & v g2 can be biased from either side (top or bottom.) 2. coaxial input dc block (c11 ) is used for input port (rf in.) 3. external wide bandwidth b ias - t ee is used for output port (rf out). v d is applied through the o utput bias - tee . application circuit ( coaxial input dc block and coaxial output bias tee ) bias - up procedure 1. set i d limit to 755 ma, i g 1 & i g 2 limit to 5 ma 2. set v g 1 to - 5.0 v 3. set v g 2 to (v d /2) - 2.7 v or 40 v/2 - 2.7 v = 17 .3 v 4. set v d +40 v 5. adjust v g 1 more positive until i dq = 360 ma (v g 1 ~ - 2.4 v typical) 6. adjust v g2 to (v d /2) + v g1 ; (v g 2 ~ + 17 .7 v typical) 7. apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g 1 to - 5.0 v. ensure i dq ~ 0ma 3. reduce v g 2 to 0 v. 4. set v d to 0 v 5. turn off v d supply 6. turn off v g 2 supply 7. turn off v g 1 supply
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 13 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com assembly drawing (coaxial input dc block and coaxial output bias tee) bill of materials reference design value description manufacturer part number c1 ? C ? c 4 1u f cap, 1206, 50v, 5 %, x7r various c 6 ? C ? c 9 1000 p f cap, 0402, 10 0v, 10%, x7r various c11 dc block various r1? C ?r6, r8? C ?r9 10? res, 0402 , 5% various
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 14 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com note s : 1. performance of the dut with surface mount dc blocks and bias tee components may be degraded relative to the coaxial option. these components should be optimize d for the desired operational band width . 2. v g1 & v g2 can be biased from either side (top or bottom.) application circuit (option with board - level dc blocks and o utput b ias t ee )
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 15 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com evaluation board layout w ith on - b oard dc b locks and o utput bia s - t option bill of materials for on - board bias - tee reference design value description manufacturer part number c1 ? C ?c5 1uf cap, 1206, 50v, 15 %, x7r c6 ? C ? c1 2 1000pf cap, 0402 , 10 0v, 10%, x 7 r various l1 330nh ind , 1206, 850 ma various r1 ? C ? r10 10? res, 0402 , 5% various
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 16 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com mechanical drawing and p in description pin layout units: millimeter tolerances: unless specified x.xx = 0. 25 x.xxx = 0. 100 materials: base: laminate lid: plastic all metalized features are gold plated part is epoxy sealed marking: 2976 : part number yy: part assembly year ww: part assembly weak mxxx: batch id pin description pin no. symbol description 1 , 3, 8, 10 gnd connected to ground paddle (pin 15 ); must be grounded on pcb . 2 rf in in put; matched to 50 . 4, 14 gate1 gate voltage 1 ; bias network is required; see recommended a pplication information on page 1 2 . 5, 7, 11, 13 n/c 6, 12 gate 2 gate voltage 2 ; bias network is required; see recommended a pplication information on page 1 2 . 9 rf out/ drain out put; matched to 50 . 15 gnd ground paddle. multiple vias should be employed to minimize inductance and thermal resistance.
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 17 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com recommended soldering temperature profile
t ga2976 - sm 0.1 C 3.0 ghz 10 w gan power amplifier datasheet: rev a 0 3 - 02 - 1 6 - 18 of 18 - disclaimer: subject to change without notice ? 2016 triquint www.triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death. contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability compatible with both lead - free (260?c maximum reflow temperature) and tin/lead (245?c maximum reflow temperature) soldering processes. rohs compliance this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : ear99

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